Substrate processing chamber including conical surface for reducing recirculation

ABSTRACT

A processing chamber in a substrate processing system includes an upper surface, sidewalls, and a bottom surface and a showerhead connected to and extending downward from the upper surface of the processing chamber. The showerhead includes a stem portion and a base portion. An inverted conical surface is arranged adjacent to the upper surface and the sidewalls of the processing chamber and includes an angled surface arranged to redirect gas flow above the showerhead from a horizontal direction to a downward direction and into a gap between a radially outer portion of the base portion and the sidewalls of the processing chamber.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present disclosure is a divisional of U.S. patent application Ser.No. 15/207,035, filed on Jul. 11, 2016. The entire disclosure of theapplication referenced above is incorporated herein by reference.

FIELD

The present disclosure relates to substrate processing systems, and moreparticularly to substrate processing systems including a collar, conicalshowerheads and/or top plates for reducing recirculation.

BACKGROUND

The background description provided here is for the purpose of generallypresenting the context of the disclosure. Work of the presently namedinventors, to the extent it is described in this background section, aswell as aspects of the description that may not otherwise qualify asprior art at the time of filing, are neither expressly nor impliedlyadmitted as prior art against the present disclosure.

Substrate processing systems may be used to deposit, etch or otherwisetreat film on a substrate such as a semiconductor wafer. The substrateprocessing systems typically include a processing chamber, a gasdistribution device such as a showerhead and a substrate support. Duringprocessing, the substrate is arranged on the substrate support.Different gas mixtures may be introduced into the processing chamber andheat or radio frequency (RF) plasma may be used during some processes toactivate chemical reactions.

The processing chamber typically includes upper and lower surfaces andside walls. The showerhead typically includes a cylindrical base portiondefining a gas plenum. A faceplate is arranged on one side of the gasplenum and includes a plurality of spaced through holes. The showerheadfurther includes a hollow stem portion that is connected at one end toan upper surface of the processing chamber and at an opposite end to acenter of the cylindrical base. The stem portion of the showerheaddelivers process gas to the gas plenum of the cylindrical base. The gasflows through the spaced through holes of the faceplate and is uniformlydispersed relative to a substrate arranged on a substrate supportlocated below the showerhead.

A collar located around the stem portion may be used to deliver curtaingas to isolate adjacent processing stations with chandelier styleshowerheads. The collar may also be used to connect the stem portion tothe upper surface of the processing chamber. The collar may include oneor more gas slits that deliver secondary purge gas between thecylindrical base portion and the upper surface of the processing chamberduring processing. A gap is defined between radially outer edges of thecylindrical base portion of the showerhead and the sidewalls of theprocessing chamber. Secondary purge gas flows through the slits on thecollar and the gap and is then evacuated via an exhaust port. Thesymmetric configuration of the showerhead may cause recirculation of thesecondary purge gas. Particles may be trapped by the recirculating gasabove the showerhead during processing and may cause defects.

SUMMARY

A substrate processing system includes a processing chamber and ashowerhead including a faceplate, a stem portion and a cylindrical baseportion. A collar connects the showerhead to a top surface of theprocessing chamber. The collar defines a gas channel to receivesecondary purge gas and a plurality of gas slits to direct the secondarypurge gas from the gas channel in a radially outward and downwarddirection. A conical surface is arranged adjacent to the cylindricalbase and around the stem portion of the showerhead. An inverted conicalsurface is arranged adjacent to a top surface and sidewalls of theprocessing chamber. The conical surface and the inverted conical surfacedefine an angled gas channel from the plurality of gas slits to a gapdefined between a radially outer portion of the cylindrical base portionand the sidewalls of the processing chamber.

In other features, the gas channel defines a flow path that has aconstant width and that is parallel to a direction of the secondarypurge gas flowing from the plurality of gas slits. The conical surfaceis hollow and is attached to at least one of the stem portion and thebase portion of the showerhead. The conical surface is solid and isattached to at least one of the stem portion and the base portion of theshowerhead.

In other features, the conical surface is integrated with at least oneof the stem portion and the base portion of the showerhead. The invertedconical surface is hollow and is attached to at least one of the topsurface and the sidewalls of the processing chamber. The invertedconical surface is solid and is attached to at least one of the topsurface and the sidewalls of the processing chamber.

In other features, the inverted conical surface is integrated with atleast one of the top surface and the sidewalls of the processingchamber. The conical surface includes a central opening for receivingthe stem portion. The plurality of gas slits are spaced in radial andaxial directions along the collar.

A substrate processing system includes a processing chamber and ashowerhead including a faceplate, a stem portion and a cylindrical baseportion. A collar connects the showerhead to a top surface of theprocessing chamber. The collar defines a gas channel and includes aradially inner surface, a radially outer surface and plurality of gasslits. Secondary purge gas flows from the gas channel through the gasslits in a radially outward direction. The radially inner surfacedefines a monotonically increasing inner diameter as an axial distanceto the cylindrical base portion decreases.

In other features, the radially inner surface of the collar and the stemportion of the showerhead define a gas channel therebetween. An invertedconical surface arranged adjacent to a top surface of the processingchamber, wherein the inverted conical surface redirects the secondarypurge gas flowing from the gas slits in a downwardly and outwardlydirection.

In other features, a spacer is arranged around the stem portion tomaintain a position of the collar relative to the stem portion. Thespacer includes an annular base portion arranged adjacent to thecylindrical base portion and a plurality of arms that extend upwardly tobias the radially inner surface of the collar.

In other features, the plurality of gas slits are spaced in radial andaxial directions along the collar.

Further areas of applicability of the present disclosure will becomeapparent from the detailed description, the claims and the drawings. Thedetailed description and specific examples are intended for purposes ofillustration only and are not intended to limit the scope of thedisclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will become more fully understood from thedetailed description and the accompanying drawings, wherein:

FIG. 1 is a functional block diagram of an example of a substrateprocessing system according to the present disclosure;

FIG. 2 is a side cross-sectional view of an example of a substrateprocessing system;

FIG. 3 is a side cross-sectional view of an example of a substrateprocessing system according to the present disclosure; and

FIG. 4 is a side cross-sectional view of another example of a substrateprocessing system according to the present disclosure.

In the drawings, reference numbers may be reused to identify similarand/or identical elements.

DETAILED DESCRIPTION

Collars, conical showerheads and/or top plates according to the presentdisclosure are used to produce laminar gas flow between the showerheadand the top surface of the processing chamber to minimizedefect-trapping recirculation regions. In some examples, the collars,conical showerheads, and/or top plates are used in conjunction withsymmetric top plates in atomic layer deposition (ALD) reactors, althoughother types of reactors may be used.

Referring now to FIG. 1, a substrate processing system 10 includes aprocessing chamber 12 having upper and lower surfaces and sidewalls. Insome examples, the substrate processing system 10 performs ALD, althoughother types of substrate processing systems and/or other processes suchas chemical vapor deposition (CVD), etching, etc. can be performed. Agas distribution device such as a showerhead 14 is arranged inside ofthe processing chamber 12. A substrate support 16 such as anelectrostatic chuck, a pedestal or other substrate support is arrangedbelow the showerhead 14. A substrate 18 is arranged on the substratesupport 16 during processing.

The substrate processing system 10 further includes a gas deliverysystem 20 including one or more gas sources 22-1, 22-2, . . . and 22-N(collectively gas sources 22), where N is an integer greater than zero.One or more valves 24-1, 24-2, . . . and 24-N and mass flow controllers26-1, 26-2, . . . and 26-N may be used to control flow of gas and gasflow rates from the gas sources 22 to a manifold 30. An output of themanifold 30 is in fluid communication with the showerhead 14.

A controller 40 and/or a temperature controller 42 may be used tocontrol a temperature of the substrate support 16. The controller 40and/or temperature controller 42 may perform heating and/or cooling. Thesubstrate support 16 may include one or more resistive heaters, fluidchannels, thermoelectric devices (TEDs) or other devices that controlheating and/or cooling in one or more zones of the substrate support 16.One or more sensors 41 such as temperature and/or pressure sensors maybe used to sense temperature and/or pressure values of the substrate 18,the substrate support 16, or inside or outside surfaces of theprocessing chamber 12. The controller 40 receives outputs of the sensors41 and controls process operating parameters based thereon. Thecontroller 40 also controls the gas delivery system 20 to supply processand/or purge gases at predetermined intervals during a process.

The controller 40 selectively causes the plasma generator 46 to generateplasma within the processing chamber 12 and to extinguish the plasma.The controller 40 controls an optional valve 50 and a pump 52 to controlpressure within the processing chamber 12 and/or to remove reactantsfrom the processing chamber 12. In some examples, the pump 52 mayinclude a turbomolecular pump.

The plasma generator 46 includes an RF source 60 that supplies RF powerand a matching network 64 that matches an impedance of the RF source 60with an output of the plasma generator 46. In some examples, the plasmagenerator 46 outputs the RF power to the showerhead 14 and an electrode(not shown) in the substrate support 16 is grounded. In other examples,the showerhead 14 is grounded and the RF power is output to theelectrode of the substrate support 16. The controller 40 communicateswith the plasma generator 46 and controls the operation of the plasmagenerator 46 including striking and extinguishing the plasma. A purgegas source 80 and a valve 82 may be used by the controller 40 toselectively supply secondary purge gas to a collar 84, as will bedescribed further below.

Referring now to FIG. 2, a substrate processing system 100 includes aprocessing chamber 110 with an upper surface 112, sidewalls 114 and abottom surface 116. A collar 122 includes a base portion 124 and a stemportion 126 that extends downwardly from the base portion 124. Thecollar 122 defines a gas channel 128. In some examples, the gas channelis defined between the collar 122 and the stem portion of theshowerhead. In other examples, the collar 122 solely defines the gaschannel. In some examples, the gas channel 128 is annular-shaped. Aninlet 129 may be used to connect a gas source such as secondary purgegas to the gas channel 128. The stem portion 126 defines one or more gasslits 130 that direct gas radially outwardly from the gas channel 128 ina parallel direction relative to the upper surface 112 of the processingchamber 110.

A showerhead 144 includes a cylindrical base portion 146 and a stemportion 152. The cylindrical base portion 146 extends radially outwardlyfrom the stem portion 152 to define a gap relative to the side walls114. The cylindrical base portion 146 further defines a gas plenum 156.The stem portion 152 may have a hollow cylindrical shape that defines acylindrical gas channel 157 that is in fluid communication with the gasplenum 156 of the cylindrical base portion 146. A gas dispersion plate158 may be used to disperse gas flowing from the stem portion 152 to thecylindrical base portion 146. The showerhead 144 may further include afaceplate 160 defining a plurality of spaced through holes 162. Thefaceplate 160 disperses the process gas in a relatively uniform mannerrelative to a substrate 166 located on a substrate support 168 below thefaceplate 160.

During operation, process gas is supplied through the gas channel 157 ofthe stem portion 152 into the gas plenum 156 of the cylindrical baseportion 146. The gas flows out of the gas plenum 156 through the spacedthrough holes 162 of the faceplate 160. During some portions of theprocess, secondary purge gas may be supplied to the gas channel 128 ofthe collar 122. A portion of the secondary purge gas flows through thegas channel 128 and the gas slits 130 as can be seen at 169. Theremainder of the secondary purge gas in the gas channel 128 flowsdownwardly toward the cylindrical base portion 146 and radiallyoutwardly as can be seen at 170.

The secondary purge gas located between the cylindrical base portion 146and the upper surface 112 of the processing chamber 110 flows through agap between the cylindrical base portion 146 and the sidewalls 114 ascan be seen at 174. At least some of the secondary purge gas isrecirculated as can be seen at 172. As described above, therecirculating secondary purge gas may trap particles that may causedefects.

It is difficult to modulate velocity or flow of the secondary purge gasto prevent recirculation. Gas flow above the Peclet number preventsgases from the showerhead back diffusing to the backside of theshowerhead (which is the function of the secondary purge gas). Withoutthis effect, particles will reach the backside (whether there isrecirculation or not).

Referring now to FIG. 3, a substrate processing system 200 according tothe present disclosure includes a processing chamber 210 with an uppersurface 212, sidewalls 214 and a bottom surface 216. While a specificplasma processing chamber is shown, other processing chambers may beused. A collar 222 includes a base portion 224 and a stem portion 226.The collar 222 includes a radially outer surface and a radially innersurface. The radially inner surface defines a gas channel 228. In someexamples, the gas channel 228 is annular shaped. An inlet 229 may beused to connect a gas source such as secondary purge gas to the gaschannel 228. The stem portion 226 defines one or more gas slits 230 thatdirect gas from the gas channel 228 at a downward angle relative to aline parallel to the upper surface 212 of the processing chamber 210, aswill be described further below. For example only, the gas slits 230 arespaced in a radial direction around the collar 222. For example only,the gas slits 230 are spaced in an axial direction along the collar 222.

A showerhead 244 includes a cylindrical base portion 246 and a stemportion 252. The cylindrical base portion 246 defines a gas plenum 256.The stem portion 252 may have a hollow cylindrical shape that defines acylindrical gas channel 257 that is in fluid communication with the gasplenum 256 of the cylindrical base portion 246. A gas dispersion plate258 may be used to disperse gas flowing from the stem portion 252 to thecylindrical base portion 246. The showerhead 244 may further include afaceplate 260 defining a plurality of spaced through holes 262. Thefaceplate 260 disperses the gas in a relatively uniform manner relativeto a substrate 266 located below the faceplate 260 on a substratesupport 268.

A conical surface 274 is arranged along a portion of the stem portion252 and the cylindrical base portion 246. For example only, the conicalsurface 274 can be hollow (as shown) or solid. For example only, theconical surface 274 may be integrated with the showerhead 244 or aseparate surface that is attached thereto (as shown). The conicalsurface 274 includes a central opening 276 for receiving the stemportion 252 of the collar 222. The conical surface 274 also includes aradially outer edge 278 that is arranged adjacent to and/or is connectedto an upper surface of the cylindrical base portion 246.

An inverted conical surface 282 is arranged adjacent to and/or isconnected to the upper surface 212 and/or the sidewalls 214 of theprocessing chamber 210. For example only, fasteners 284 may be used. Forexample only, the inverted conical surface 282 may be hollow or solid.For example only, the inverted conical surface 282 may be integratedwith the top surface 212 and/or sidewalls 214 or a separate surface thatis attached thereto (as shown). The conical surface 274 and the invertedconical surface 282 include facing surfaces 286 and 288, respectively,that define a flow channel 290. In some examples, the facing surfaces286 and 288 of the flow channel 290 define a generally constant gap andare generally parallel. In other examples, an angle of the flow channel290 defined by the facing surfaces 286 and 288 is approximately the sameas an angle defined by the secondary purge gas flowing out of the gasslits 230.

During operation, process gas is supplied through the cylindrical gaschannel 257 of the stem portion 252 into the gas plenum 256 of thecylindrical base portion 246. The gas flows out of the gas plenum 256through the spaced through holes 262.

During some portions of the process, secondary purge gas may be suppliedto the gas channel 228 of the collar 222. The secondary purge gas flowsthrough the gas channel 228 and the gas slits 230 as can be seen at 269.The secondary purge gas in the flow channel 290 passes through a gapbetween the cylindrical base portion 246 and the sidewalls 214 as can beseen at 292. As can be seen, the arrangement in FIG. 3 ensuressubstantially laminar flow of the secondary purge gas, which reducesrecirculation and defects.

In some examples, the conical surface 274 extends from a radially outeredge of the cylindrical base portion 246 to a radially outer edge of thestem portion 252 of the showerhead 244. In other examples, the conicalsurface 274 extends from a point near a radially outer edge of thecylindrical base portion 246 to a radially outer edge of the stemportion 252 of the showerhead 244. In other words, a gap may be createdadjacent to the cylindrical base portion 246. In other examples, theconical surface 274 extends from a radially outer edge of thecylindrical base portion 246 to a point near a radially outer edge ofthe stem portion 252 of the showerhead 244. In other words, a gap may becreated adjacent to the showerhead 244. In still other examples, gapsare created on both sides of the conical surface 274.

In some examples, the inverted conical surface 282 extends from thesidewalls 214 to a radially outer edge of the stem portion 226 of thecollar 222. In some examples, the inverted conical surface 282 extendsfrom a point near the sidewalls 214 to a radially outer edge of the stemportion 226 of the collar 222. In other words, a gap may be createdbetween the inverted conical surface 282 and the sidewalls 214. In someexamples, the inverted conical surface 282 extends from the sidewalls214 to a point near a radially outer edge of the stem portion 226 of thecollar 222. In other words, the gap may be created between the invertedconical surface 282 and the collar 222. In still other examples, gapsare created on both sides of the inverted conical surface 282.

Referring now to FIG. 4, a substrate processing system 300 according tothe present disclosure includes a processing chamber 310 with an uppersurface 312, sidewalls 314 and a bottom surface 316. While a specificplasma processing chamber is shown, other processing chambers may beused.

A collar 322 includes a base portion 324 and a stem portion 326. Thecollar 322 includes a radially outer surface and a radially innersurface. The collar 322 defines a gas channel 328. In some examples, thegas channel 328 is annular shaped. An inlet 329 may be used to connect agas source such as purge gas to the annular gas channel 328. The stemportion 326 defines one or more gas slits 330-1, 330-2, . . . , 330-S(collectively gas slits 330) that are arranged around the stem portion326 that direct secondary purge gas through the collar 322 from the gaschannel 328 into the processing chamber 310. The collar 322 may alsodefine a lower opening to the gas channel 328. If used, the secondarypurge gas also flows through the lower opening of the collar 322.

A showerhead 344 includes a cylindrical base portion 346 and a stemportion 352. The cylindrical base portion 346 defines a gas plenum 356.The stem portion 352 may have a hollow cylindrical shape that defines agas channel 357 that is in fluid communication with the gas plenum 356of the cylindrical base portion 346. A gas dispersion plate 358 may beused to disperse gas flowing from the stem portion 352 to thecylindrical base portion 346. The showerhead 344 may further include afaceplate 360 defining a plurality of spaced through holes 362. Thefaceplate 360 disperses the gas in a relatively uniform manner relativeto a substrate 366 located below the faceplate 360 on a substratesupport 368.

In some examples, the gas slits 330 on the stem portion 326 of thecollar 322 direct gas from the gas channel 328 in a generally paralleldirection relative to the upper surface 312 of the processing chamber310. In some examples, an inner surface 331 of the stem portion 326 ofthe collar 322 has a monotonically increasing diameter as a verticaldistance to the cylindrical base portion 346 decreases. The innersurface 331 defines a monotonically increasing gap between the collar322 and the stem portion 352. In some examples, regions 332-1, 332-2, .. . 332-S bounded between adjacent ones of the gas slits 330, the stemportion 326 of the collar 322 and the stem portion 352 of the showerhead344 are generally annular shaped with a trapezoidal cross-section. Insome examples, radially inner angles of the trapezoidal cross-sectionare approximately right angles and radially outer surfaces of theregions 332 have a monotonically increasing diameter from top to bottom.

An inverted conical surface 382 is arranged adjacent to and/or isconnected to the upper surface 312 of the processing chamber 310. Forexample only, fasteners 384 may be used. The inverted conical surface382 includes an angled surface 386 that redirects horizontal gas flow ina downward direction. In some examples, the angled surfaces 386 arearranged at an acute angle relative to the flow from the gas slits 330.In some examples, the angled surfaces 386 are arranged at an anglebetween 30° and 60° relative to the flow from the gas slits 330. In someexamples, the angled surfaces 386 are arranged at an angle between 40°and 50° relative to the flow from the gas slits 330. In some examples, aradially inner edge of the inverted conical surface 382 is spaced fromthe collar 322. In some examples, a bottom portion of a radially outeredge of the inverted conical surface 382 is located at or above an uppersurface of the cylindrical base portion 346.

A spacer 370 may be provided to maintain a position of the collar 322relative to the stem portion 352 of the showerhead 344. The spacer 370may include an annular base portion 371 arranged around the stem portion352 and resting on the cylindrical base portion 346. The spacer 370further includes two or more arms 372 projecting upwardly from theannular base portion 371. An upper end of the arms 372 biases an innersurface of the stem portion 326 in an upward and outward direction.

During operation, process gas is supplied through the gas channel 357 ofthe stem portion 352 into the gas plenum 356 of the cylindrical baseportion 346. The gas flows out of the gas plenum 356 through the spacedthrough holes 362.

During some portions of the process, secondary purge gas may be suppliedto the gas channel 328 of the collar 322. The secondary purge gas flowsthrough the gas channel 328 and the gas slits 330 as can be seen at 369.The gas flow 369 is redirected generally downwardly by the angledsurfaces 386 of the inverted conical surface 382 towards a gap 387between the showerhead 344 and the sidewalls 314. Other portions of thesecondary purge gas flows downwardly out a bottom of the stem portion326 and outwardly towards the sidewalls 314. As can be appreciated, thecombination of the inverted conical surface 382 and the collar 322reduce recirculation in an area above the showerhead 344.

The foregoing description is merely illustrative in nature and is in noway intended to limit the disclosure, its application, or uses. Thebroad teachings of the disclosure can be implemented in a variety offorms. Therefore, while this disclosure includes particular examples,the true scope of the disclosure should not be so limited since othermodifications will become apparent upon a study of the drawings, thespecification, and the following claims. It should be understood thatone or more steps within a method may be executed in different order (orconcurrently) without altering the principles of the present disclosure.Further, although each of the embodiments is described above as havingcertain features, any one or more of those features described withrespect to any embodiment of the disclosure can be implemented in and/orcombined with features of any of the other embodiments, even if thatcombination is not explicitly described. In other words, the describedembodiments are not mutually exclusive, and permutations of one or moreembodiments with one another remain within the scope of this disclosure.

Spatial and functional relationships between elements (for example,between modules, circuit elements, semiconductor layers, etc.) aredescribed using various terms, including “connected,” “engaged,”“coupled,” “adjacent,” “next to,” “on top of,” “above,” “below,” and“disposed.” Unless explicitly described as being “direct,” when arelationship between first and second elements is described in the abovedisclosure, that relationship can be a direct relationship where noother intervening elements are present between the first and secondelements, but can also be an indirect relationship where one or moreintervening elements are present (either spatially or functionally)between the first and second elements. As used herein, the phrase atleast one of A, B, and C should be construed to mean a logical (A OR BOR C), using a non-exclusive logical OR, and should not be construed tomean “at least one of A, at least one of B, and at least one of C.”

In some implementations, a controller is part of a system, which may bepart of the above-described examples. Such systems can comprisesemiconductor processing equipment, including a processing tool ortools, chamber or chambers, a platform or platforms for processing,and/or specific processing components (a wafer pedestal, a gas flowsystem, etc.). These systems may be integrated with electronics forcontrolling their operation before, during, and after processing of asemiconductor wafer or substrate. The electronics may be referred to asthe “controller,” which may control various components or subparts ofthe system or systems. The controller, depending on the processingrequirements and/or the type of system, may be programmed to control anyof the processes disclosed herein, including the delivery of processinggases, temperature settings (e.g., heating and/or cooling), pressuresettings, vacuum settings, power settings, radio frequency (RF)generator settings, RF matching circuit settings, frequency settings,flow rate settings, fluid delivery settings, positional and operationsettings, wafer transfers into and out of a tool and other transfertools and/or load locks connected to or interfaced with a specificsystem.

Broadly speaking, the controller may be defined as electronics havingvarious integrated circuits, logic, memory, and/or software that receiveinstructions, issue instructions, control operation, enable cleaningoperations, enable endpoint measurements, and the like. The integratedcircuits may include chips in the form of firmware that store programinstructions, digital signal processors (DSPs), chips defined asapplication specific integrated circuits (ASICs), and/or one or moremicroprocessors, or microcontrollers that execute program instructions(e.g., software). Program instructions may be instructions communicatedto the controller in the form of various individual settings (or programfiles), defining operational parameters for carrying out a particularprocess on or for a semiconductor wafer or to a system. The operationalparameters may, in some embodiments, be part of a recipe defined byprocess engineers to accomplish one or more processing steps during thefabrication of one or more layers, materials, metals, oxides, silicon,silicon dioxide, surfaces, circuits, and/or dies of a wafer.

The controller, in some implementations, may be a part of or coupled toa computer that is integrated with the system, coupled to the system,otherwise networked to the system, or a combination thereof. Forexample, the controller may be in the “cloud” or all or a part of a fabhost computer system, which can allow for remote access of the waferprocessing. The computer may enable remote access to the system tomonitor current progress of fabrication operations, examine a history ofpast fabrication operations, examine trends or performance metrics froma plurality of fabrication operations, to change parameters of currentprocessing, to set processing steps to follow a current processing, orto start a new process. In some examples, a remote computer (e.g. aserver) can provide process recipes to a system over a network, whichmay include a local network or the Internet. The remote computer mayinclude a user interface that enables entry or programming of parametersand/or settings, which are then communicated to the system from theremote computer. In some examples, the controller receives instructionsin the form of data, which specify parameters for each of the processingsteps to be performed during one or more operations. It should beunderstood that the parameters may be specific to the type of process tobe performed and the type of tool that the controller is configured tointerface with or control. Thus as described above, the controller maybe distributed, such as by comprising one or more discrete controllersthat are networked together and working towards a common purpose, suchas the processes and controls described herein. An example of adistributed controller for such purposes would be one or more integratedcircuits on a chamber in communication with one or more integratedcircuits located remotely (such as at the platform level or as part of aremote computer) that combine to control a process on the chamber.

Without limitation, example systems may include a plasma etch chamber ormodule, a deposition chamber or module, a spin-rinse chamber or module,a metal plating chamber or module, a clean chamber or module, a beveledge etch chamber or module, a physical vapor deposition (PVD) chamberor module, a chemical vapor deposition (CVD) chamber or module, anatomic layer deposition (ALD) chamber or module, an atomic layer etch(ALE) chamber or module, an ion implantation chamber or module, a trackchamber or module, and any other semiconductor processing systems thatmay be associated or used in the fabrication and/or manufacturing ofsemiconductor wafers.

As noted above, depending on the process step or steps to be performedby the tool, the controller might communicate with one or more of othertool circuits or modules, other tool components, cluster tools, othertool interfaces, adjacent tools, neighboring tools, tools locatedthroughout a factory, a main computer, another controller, or tools usedin material transport that bring containers of wafers to and from toollocations and/or load ports in a semiconductor manufacturing factory.

What is claimed is:
 1. A processing chamber in a substrate processingsystem, the processing chamber comprising: an upper surface, sidewalls,and a bottom surface; a showerhead connected to and extending downwardfrom the upper surface of the processing chamber, wherein the showerheadincludes a stem portion and a base portion; an inverted conical surfacearranged adjacent to the upper surface and the sidewalls of theprocessing chamber, wherein the inverted conical surface includes anangled surface arranged to redirect gas flow above the showerhead (i)from a horizontal direction to a downward direction and (ii) into a gapbetween a radially outer portion of the base portion and the sidewallsof the processing chamber; and a collar connecting the showerhead to theupper surface of the processing chamber, wherein the collar defines agas channel between a radially inner surface of the gas channel and thestem portion of the showerhead, and wherein the collar includes one ormore slits arranged to direct purge gases from the gas channel to aregion above the showerhead.
 2. The processing chamber of claim 1,wherein the base portion defines a gas plenum and the stem portiondefines a gas channel in fluid communication with the gas plenum.
 3. Theprocessing chamber of claim 1, wherein the showerhead includes afaceplate arranged to disperse gas into the processing chamber.
 4. Theprocessing chamber of claim 1, wherein the radially inner surface has anincreasing diameter as a vertical distance from the upper surface of theprocessing chamber increases.
 5. The processing chamber of claim 1,wherein the one or more slits direct the purge gases in the horizontaldirection.
 6. The processing chamber of claim 5, wherein the angledsurface is arranged at an acute angle relative to the horizontaldirection.
 7. The processing chamber of claim 5, wherein the angledsurface is arranged at an angle between 30 and 60 degrees relative tothe horizontal direction.
 8. The processing chamber of claim 5, whereinthe angled surface is arranged at an angle between 40 and 50 degreesrelative to the horizontal direction.
 9. The processing chamber of claim1, wherein a radially inner edge of the inverted conical surface isspaced from the collar.
 10. A processing chamber in a substrateprocessing system, the processing chamber comprising: an upper surface,sidewalls, and a bottom surface; a showerhead connected to and extendingdownward from the upper surface of the processing chamber, wherein theshowerhead includes a stem portion and a base portion; an invertedconical surface arranged adjacent to the upper surface and the sidewallsof the processing chamber, wherein the inverted conical surface includesan angled surface arranged to redirect gas flow above the showerhead (i)from a horizontal direction to a downward direction and (ii) into a gapbetween a radially outer portion of the base portion and the sidewallsof the processing chamber; a collar connecting the showerhead to theupper surface of the processing chamber; and a spacer arranged tomaintain a position of the collar relative to the stem portion of theshowerhead.
 11. The processing chamber of claim 10, wherein the spacerincludes an annular base portion arranged on the base portion of theshowerhead and around the stem portion of the showerhead.
 12. Theprocessing chamber of claim 11, wherein the spacer includes two or morearms projecting upwardly from the annular base portion, wherein upperends of the two or more arms bias the collar in an upward and outwarddirection.
 13. The processing chamber of claim 1, further comprisingfasteners connecting the inverted conical surface to the upper surfaceof the processing chamber.